FQT5P10TF Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – P-Channel QFET® MOSFET -100 V, -1.0 A, 1.05 Ω

FQT5P10
P-Channel QFET^® MOSFET
-100 V, -1.0 A, 1.05 Ω
March 2013
Description
This P-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor^®’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, audio amplifier, DC motor control, and
variable switching power applications.
Features
• -1.0 A, -100 V, RDS(on)=1.05 Ω(Max.) @VGS=-10 V, ID=-0.5 A
• Low Gate Charge (Typ. 6.3 nC)
• Low Crss (Typ. 18 pF)
• 100% Avalanche Tested
D
S
G _SOT-223
Absolute Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
V_DSS
I_D
I_DM
V_GSS
E_AS
I_AR
E_AR
dv/dt
P_D
T_J, T_STG
T_L
Parameter
Drain-Source Voltage
Drain Current
- Continuous (T_C = 25°C)
- Continuous (T_C = 70°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (T_C = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
Parameter
R_θJA
Thermal Resistance, Junction-to-Ambient *
* When mounted on the minimum pad size recommended (PCB Mount)
D
G
S
FQT5P10
-100
-1.0
-0.8
-4.0
± 30
55
-1.0
0.2
-6.0
2.0
0.016
-55 to +150
300
Typ
Max
--
62.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
©2002 Fairchild Semiconductor Corporation
FQT5P10 Rev. C0
www.fairchildsemi.com