FQT4N25TF Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – N-Channel QFET® MOSFET

Typical Characteristics
V_GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
10⁰
6.0 V
Bottom : 5.5 V
10^-1
10^-1
※ Notes :
1. 250μ s Pulse Test
2. T_C = 25℃
10⁰
10¹
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
8
6
V_GS = 10V
V = 20V
4
GS
2
※ Note : T = 25℃
J
0
0
2
4
6
8
I_D, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
350
300
250
200
150
100
50
0
10^-1
C = C + C (C = shorted)
iss gs gd ds
C_oss = C_ds + C_gd
C_rss = C_gd
C
iss
C
oss
※ Notes :
1. V_GS = 0 V
2. f = 1 MHz
C
rss
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2001 Fairchild Semiconductor Corporation
FQT4N25 Rev. C0
10⁰
10^-1
2
150℃
25℃
-55℃
※ Notes :
1. V = 50V
2. 25^D0^Sμ s Pulse Test
4
6
8
10
V_GS , Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10⁰
10^-1
0.2
150℃
25℃
※ Notes :
1. V = 0V
2. 25^G0^Sμ s Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
V , Source-Drain Voltage [V]
SD
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
V = 50V
DS
10
V = 125V
DS
V = 200V
DS
8
6
4
2
※ Note : I_D = 3.6 A
0
0
1
2
3
4
5
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
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