FQT4N25TF Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – N-Channel QFET® MOSFET

FQT4N25
N-Channel QFET^® MOSFET
250 V, 0.83 A, 1.75 Ω
March 2013
Description
Features
This N-Channel enhancement mode power MOSFET is • ^{0.83 A, 250 V, R}DS(on)^{=1.75 Ω(Max.)@V}GS^{=10 V, I}D^{=0.415 A}
produced using Fairchild Semiconductor^®’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
• Low Gate Charge (Typ. 4.3 nC)
• Low C_rss (Typ. 4.8 pF)
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and
electronic lamp ballasts.
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Absolute Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
V_DSS
I_D
I_DM
V_GSS
E_AS
I_AR
E_AR
dv/dt
P_D
T_J, T_STG
T_L
Parameter
Drain-Source Voltage
Drain Current
- Continuous (T_C = 25°C)
- Continuous (T_C = 70°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (T_C = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
R_θJA
Parameter
Thermal Resistance, Junction-to-Ambient *
* When mounted on the minimum pad size recommended (PCB Mount)
FQT4N25
250
0.83
0.66
3.3
± 30
52
0.83
0.25
5.5
2.5
0.02
-55 to +150
300
Typ
Max
--
50
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
©2001 Fairchild Semiconductor Corporation
FQT4N25 Rev. C0
www.fairchildsemi.com