FQT4N20 Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – 200V N-Channel MOSFET

Typical Characteristics
V
Top :
15^GV^S
10 V
8.0 V
7.0 V
6.5 V
10⁰
6.0 V
Bottom : 5.5 V
10^-1
10^-1
※ Notes :
1. 250μ s Pulse Test
2. T_C = 25℃
10⁰
10¹
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
7
6
5
V = 10V
GS
4
V = 20V
GS
3
2
1
0
0
2
4
6
8
I , Drain Current [A]
D
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
300
250
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C_rss = C_gd
C_iss
200
C
oss
150
100
※ Notes :
1. V_GS = 0 V
C
2. f = 1 MHz
rss
50
0
10^-1
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2001 Fairchild Semiconductor Corporation
10⁰
150℃
10^-1
2
25℃
-55℃
※ Notes :
1.
2.
2V5^DS0μ^=s40PVulse
Test
4
6
8
10
V_GS , Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10⁰
10^-1
0.2
150℃ 25℃
※ Notes :
1.
2.
2V5^GS0μ^=s40PVulse
Test
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
V , Source-Drain Voltage [V]
SD
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
V = 40V
DS
10
V = 100V
DS
V_DS = 160V
8
6
4
2
※ Note : I_D = 3.6 A
0
0
1
2
3
4
5
6
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A, May 2001