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FQT4N20 Datasheet, PDF (2/8 Pages) Fairchild Semiconductor – 200V N-Channel MOSFET
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Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
∆BVDSS
/ ∆TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = 250 µA
200 --
ID = 250 µA, Referenced to 25°C -- 0.24
IDSS
Zero Gate Voltage Drain Current
VDS = 200 V, VGS = 0 V
VDS = 160 V, TC = 125°C
--
--
--
--
IGSSF
IGSSR
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
--
--
--
--
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = 250 µA
3.0 --
VGS = 10 V, ID = 0.425 A
-- 1.12
VDS = 40 V, ID = 0.425 A (Note 4) -- 1.08
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 170
-- 35
--
5
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 100 V, ID = 3.6 A,
RG = 25 Ω
--
7
-- 50
--
7
(Note 4, 5) --
25
VDS = 160 V, ID = 3.6 A,
-- 5.0
VGS = 10 V
-- 1.4
(Note 4, 5) --
2.1
--
--
1
10
100
-100
5.0
1.4
--
220
45
7
25
110
25
60
6.5
--
--
V
V/°C
µA
µA
nA
nA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
-- 0.85
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
3.4
A
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.85 A
--
--
1.5
V
trr
Reverse Recovery Time
VGS = 0 V, IS = 3.6 A,
-- 90
--
ns
Qrr
Reverse Recovery Charge
dIF / dt = 100 A/µs
(Note 4) -- 0.24
--
µC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 108mH, IAS = 0.85A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 3.6A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2001 Fairchild Semiconductor Corporation
Rev. A, May 2001
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