FQT1N80TF Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – N-Channel MOSFET 800V, 0.2A, 20

Typical Performance Characteristics
Figure 1. On-Region Characteristics
V_GS
Top : 15.0 V
10.0 V
10⁰
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
10^-1
10^-2
10^-1
※ Notes :
1. 250µs Pulse Test
2. T_C = 25℃
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
50
40
V_GS = 10V
30
V_GS = 20V
20
10
※ Note: T_J =25℃
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
I_D, Drain Current [A]
Figure 5. Capacitance Characteristics
250
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C_rss = C_gd
200
C_iss
150
C
oss
100
※ Notes :
1. V_GS = 0 V
2. f = 1 MHz
50
C_rss
0
10^-1
10⁰
10¹
V_DS, Drain-Source Voltage [V]
FQT1N80TF_WS Rev. C0
Figure 2. Transfer Characteristics
10⁰
150^oC
10^-1
2
25^oC
-55^oC
※ Notes :
1. V_DS = 50V
2. 250µs Pulse Test
4
6
8
10
V_GS, Gate-Source Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
10⁰
10^-1
0.2
150℃
25℃
※ Notes :
1. V_GS = 0V
2. 250µs Pulse Test
0.4
0.6
0.8
1.0
1.2
V_SD, Source-Drain voltage [V]
Figure 6. Gate Charge Characteristics
12
10
V_DS = 160V
V_DS = 400V
8
V_DS = 640V
6
4
2
※ Note : I_D = 1.0 A
0
0
1
2
3
4
5
6
Q_G, Total Gate Charge [nC]
3
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