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FQT1N80TF Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – N-Channel MOSFET 800V, 0.2A, 20
FQT1N80TF_WS
N-Channel MOSFET
800V, 0.2A, 20Ω
Features
• RDS(on) = 15.5Ω (Typ.)@ VGS = 10V, ID = 0.1A
• Low gate charge ( Typ. 5.5nC)
• Low Crss ( Typ. 2.7pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
August 2011
QFET ®
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
D
D
S
G SOT-223
FQT Series
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
G
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
S
FQT1N80TF_WS
800
±30
0.2
0.12
0.8
90
0.2
0.2
4.0
2.1
0.02
-55 to +150
300
Thermal Characteristics
Symbol
Parameter
RθJA
Thermal Resistance, Junction to Ambient*
* When mounted on the minimum pad size recommended (PCB Mount)
Min.
-
Max.
60
Units
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Units
oC/W
©2011 Fairchild Semiconductor Corporation
1
FQT1N80TF_WS Rev. C0
www.fairchildsemi.com