FQT13N06L Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – 60V LOGIC N-Channel MOSFET

Typical Characteristics
10¹
Top :
10.V0^GV^S
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
Bottom : 3.0 V
10⁰
10^-1
※ Notes :
1. 250μ s Pulse Test
2. T_C = 25℃
10⁰
10¹
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
250
200
V = 5V
GS
150
V = 10V
GS
100
50
※ Note : T_J = 25℃
0
0
10
20
30
40
I_D, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
800
600
400
200
0
10^-1
C = C + C (C = shorted)
iss
gs
gd ds
C =C +C
oss
ds
gd
C =C
rss
gd
※ Notes :
1. V = 0 V
GS
2. F = 1 MHz
C_iss
C_oss
C
rss
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2001 Fairchild Semiconductor Corporation
10¹
10⁰ _150℃
25℃
-55℃
※ Notes :
1.
2.
V25_DS0μ=s25PVulse
Test
10^-1
0
2
4
6
8
10
V , Gate-Source Voltage [V]
GS
Figure 2. Transfer Characteristics
10¹
10⁰
10^-1
0.2
150℃
25℃
※ Notes :
1.
2.
V25_G0Sμ=s0VPulse
Test
0.4
0.6
0.8
1.0
1.2
V , Source-Drain voltage [V]
SD
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10
V = 30V
DS
8
V_DS = 48V
6
4
2
※ Note : I = 13.6A
D
0
0
2
4
6
8
10
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A, May 2001