FQT13N06L Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – 60V LOGIC N-Channel MOSFET

FQT13N06L
60V LOGIC N-Channel MOSFET
May 2001
QFET ^TM
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as automotive, DC/
DC converters, and high efficiency switching for power
management in portable and battery operated products.
Features
• 2.8A, 60V, R_DS(on) = 0.11Ω @V_GS = 10 V
• Low gate charge ( typical 4.8 nC)
• Low Crss ( typical 17 pF)
• Fast switching
• Improved dv/dt capability
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FQT Series
Absolute Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
V_DSS
I_D
I_DM
V_GSS
E_AS
I_AR
E_AR
dv/dt
P_D
T_J, T_STG
T_L
Parameter
Drain-Source Voltage
Drain Current
- Continuous (T_C = 25°C)
- Continuous (T_C = 70°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (T_C = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
Parameter
R_θJA
Thermal Resistance, Junction-to-Ambient *
* When mounted on the minimum pad size recommended (PCB Mount)
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FQT13N06L
60
2.8
2.24
11.2
± 20
85
2.8
0.21
7.0
2.1
0.017
-55 to +150
300
Typ
Max
--
60
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
©2001 Fairchild Semiconductor Corporation
Rev. A, May 2001