 English |
|
|
|
|
|
|
|
| FQPF9N90CT Datasheet, PDF (3/10 Pages) Fairchild Semiconductor – N-Channel QFET MOSFET 900 V, 8.0 A, 1.4 Ohm | |||
| |||
| ◁ |
Typical Characteristics
V
Top : 15.0GVS
10.0 V
8.0 V
101
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
100
10-1
10-1
â» Notes :
1. 250μ s Pulse Test
2. TC = 25â
100
101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
3.0
2.5
VGS = 10V
2.0
V = 20V
GS
1.5
â» Note : TJ = 25â
1.0
0
5
10
15
20
25
30
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
3500
3000
2500
2000
1500
1000
500
0
10-1
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
C
iss
C
oss
C
rss
â» Notes :
1. VGS = 0 V
2. f = 1 MHz
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2003 Fairchild Semiconductor Corporation
FQP9N90C / FQPF9N90C Rev. C0
101
150oC
25oC
100
-55oC
10-1
2
â» Notes :
1. V = 50V
2. 25D0Sμ s Pulse Test
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150â
25â
â» Notes :
1.
2.
V25G0Sμ=s0VPulse
Test
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
V = 180V
DS
10
V = 450V
DS
V = 720V
DS
8
6
4
2
â» Note : ID = 9A
0
0
10
20
30
40
50
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
www.fairchildsemi.com
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese