FQPF9N90CT Datasheet, PDF (1/10 Pages) Fairchild Semiconductor – N-Channel QFET MOSFET 900 V, 8.0 A, 1.4 Ohm

FQP9N90C / FQPF9N90C
N-Channel QFET^® MOSFET
900 V, 8.0 A, 1.4 Ω
March 2013
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor^®’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and
electronic lamp ballasts.
Features
• 8 A, 900V, R_DS(on) = 1.4 Ω @V_GS = 10 V, I_D = 4 A
• Low Gate Charge (Typ. 45 nC)
• Low Crss (Typ. 14 pF)
• 100% Avalanche Tested
GDS
TO-220
GD S
TO-220F
D
!
G!
●
◀▲
●
●
!
S
Absolute Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
Parameter
V_DSS
Drain-Source Voltage
I_D
Drain Current - Continuous (T_C = 25°C)
- Continuous (T_C = 100°C)
I_DM
Drain Current - Pulsed
(Note 1)
V_GSS
Gate-Source Voltage
E_AS
Single Pulsed Avalanche Energy
(Note 2)
I_AR
Avalanche Current
(Note 1)
E_AR
Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
P_D
Power Dissipation (T_C = 25°C)
- Derate above 25°C
T_J, T_STG
Operating and Storage Temperature Range
T_L
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature
FQP9N90C FQPF9N90C
900
8.0
8.0 *
2.8
2.8 *
32
32 *
± 30
900
8.0
20.5
4.0
205
68
1.64
0.54
-55 to +150
300
Thermal Characteristics
Symbol
R_θJC
R_θJS
R_θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
FQP9N90C
0.61
0.5
62.5
FQPF9N90C
1.85
--
62.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
FQP9N90C / FQPF9N90C Rev. C0
www.fairchildsemi.com