FQPF9N50CF Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – 500V N-Channel MOSFET

Typical Performance Characteristics
Figure 1. On-Region Characteristics
Top :
V_GS
15.0 V
10.0 V
8.0 V
7.0 V
10¹
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
10⁰
10^-1
10^-1
œ Notes :
1. 250µ s Pulse Test
2. T_C = 25
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
2.0
V_GS = 10V
1.5
Figure 2. Transfer Characteristics
10¹
150^oC
25^oC
10⁰
-55^oC
10^-1
2
œ Notes :
1. V_DS = 40V
2. 250µ s Pulse Test
4
6
8
10
V_GS, Gate-Source Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
10¹
1.0
V_GS = 20V
0.5
œ Note : T_J = 25
0
5
10
15
20
25
I_D, Drain Current [A]
Figure 5. Capacitance Characteristics
2000
1600
1200
800
400
C_iss
C_oss
C_rss
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C_rss = C_gd
œ Notes ;
1. V_GS = 0 V
2. f = 1 MHz
0
10^-1
10⁰
10¹
V_DS, Drain-Source Voltage [V]
10⁰
10^-1
0.2
150
25
œ Notes :
1. V_GS = 0V
2. 250µ s Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
V_SD, Source-Drain voltage [V]
Figure 6. Gate Charge Characteristics
12
10
V_DS = 100V
V_DS = 250V
8
V_DS = 400V
6
4
2
œ Note : I_D = 9A
0
0
5
10
15
20
25
30
Q_G, Total Gate Charge [nC]
3
FQPF9N50CF Rev. A
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