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FQPF9N50CF Datasheet, PDF (2/8 Pages) Fairchild Semiconductor – 500V N-Channel MOSFET
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Package Marking and Ordering Information
Device Marking
FQPF9N50CF
Device
FQPF9N50CF
Package
TO-220F
Reel Size
--
Tape Width
--
Quantity
50
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
500
∆BVDSS/
∆TJ
Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C
--
IDSS
Zero Gate Voltage Drain Current
VDS = 500 V, VGS = 0 V
--
VDS = 400 V, TC = 125°C
--
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
On Characteristics
VGS(th)
Gate Threshold Voltage
RDS(on)
Static Drain-Source On-Resistance
gFS
Forward Transconductance
Dynamic Characteristics
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 4.5 A
VDS = 40 V, ID = 4.5 A
2.0
--
(Note 4)
--
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
VDS = 25 V, VGS = 0 V,
--
f = 1.0 MHz
--
--
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
VDD = 250 V, ID = 9A,
--
RG = 25 Ω
--
td(off)
Turn-Off Delay Time
--
tf
Turn-Off Fall Time
(Note 4, 5)
--
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS = 400 V, ID = 9A,
--
VGS = 10 V
--
Qgd
Gate-Drain Charge
(Note 4, 5)
--
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 9 A
--
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 9 A,
dIF / dt = 100 A/µs
--
(Note 4)
--
NOTES:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 8mH, IAS = 9A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 11A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
* Current limited by maximum junction temperature
Typ
--
0.57
--
--
--
--
--
0.70
6.5
790
130
24
18
65
93
64
28
4
15
--
--
--
100
0.3
Max Units
--
--
10
100
100
-100
V
V/°C
µA
µA
nA
nA
4.0
V
0.85
Ω
--
S
1030 pF
170 pF
30
pF
45
ns
140
ns
195
ns
125
ns
35
nC
--
nC
--
nC
9*
A
36*
A
1.4
V
--
ns
--
µC
2
FQPF9N50CF Rev. A
www.fairchildsemi.com
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