FQPF2P40 Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – 400V P-Channel MOSFET

Typical Characteristics
Top :
V_GS
-15.0 V
-10.0 V
-8.0 V
-7.0 V
10⁰
-6.5 V
-6.0 V
Bottom : -5.5 V
10^-1
10^-2
10^-1
※ Notes :
1. 250μs Pulse Test
2. T_C = 25℃
10⁰
10¹
-V_DS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
12
10
V = - 10V
GS
V = - 20V
GS
8
6
※ Note : T_J = 25℃
4
0
1
2
3
4
5
6
-I , Drain Current [A]
D
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
600
500
400
300
200
100
0
10^-1
C = C + C (C = shorted)
iss
gs
gd ds
C =C +C
oss
ds
gd
C =C
rss
gd
C
iss
C
oss
C
rss
※ Notes :
1. V = 0 V
GS
2. f = 1 MHz
10⁰
10¹
-V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
©2000 Fairchild Semiconductor International
10⁰
150℃
10^-1
2
25℃
-55℃
※ Notes :
1. V_DS = -50V
2. 250μs Pulse Test
4
6
8
10
-V_GS , Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10⁰
10^-1
0.0
150℃ 25℃
※ Notes :
1. V_GS = 0V
2. 250μs Pulse Test
0.5
1.0
1.5
2.0
2.5
3.0
-V_SD , Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
V_DS = -80V
V = -200V
DS
8
V = -320V
DS
6
4
2
※ Note : I_D = -2.0 A
0
0
2
4
6
8
10
12
Q , Total Gate Charge [nC]
G
Figure 6. Gate Charge Characteristics
Rev. A2, December 2000