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FQPF2P40 Datasheet, PDF (2/8 Pages) Fairchild Semiconductor – 400V P-Channel MOSFET
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Elerical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
∆BVDSS
/ ∆TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = -250 µA
-400 --
ID = -250 µA, Referenced to 25°C --
-
IDSS
Zero Gate Voltage Drain Current
VDS = -400 V, VGS = 0 V
VDS = -320 V, TC = 125°C
--
--
--
--
IGSSF
IGSSR
Gate-Body Leakage Current, Forward VGS = -30 V, VDS = 0 V
Gate-Body Leakage Current, Reverse VGS = 30 V, VDS = 0 V
--
--
--
--
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = -250 µA
-3.0 --
VGS = -10 V, ID = -0.67 A
-- 5.0
VDS = -50 V, ID = -0.67 A (Note 4)
--
1.17
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = -25 V, VGS = 0 V,
f = 1.0 MHz
-- 270
--
45
-- 6.5
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = -200 V, ID = -2.0 A,
RG = 25 Ω
--
9
--
33
--
22
(Note 4, 5)
--
25
VDS = -320 V, ID = -2.0 A,
--
10
VGS = -10 V
-- 2.1
(Note 4, 5)
--
5.5
--
--
-1
-10
-100
100
-5.0
6.5
--
350
60
8.5
30
75
55
60
13
--
--
V
V/°C
µA
µA
nA
nA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
-- -1.34
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
-- -5.36
A
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = -1.34 A
--
--
-5.0
V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = -2.0 A,
-- 250
--
ns
dIF / dt = 100 A/µs
(Note 4)
--
0.85
--
µC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 117mH, IAS = -1.34A, VDD = -50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ -2.0A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2000 Fairchild Semiconductor International
Rev. A2, December 2000
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