FQPF12N20L Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – 200V LOGIC N-Channel MOSFET

Typical Characteristics
V
GS
Top : 10 V
8.0 V
10¹
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
Bottom : 3.0 V
10⁰
10^-1
10^-1
※ Notes :
1. 250μs Pulse Test
2. T = 25℃
C
10⁰
10¹
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
1.5
1.2
V_GS = 5 V
0.9
V = 10V
GS
0.6
0.3
0.0
0
6
12
18
24
30
36
I_D , Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
1800
1500
1200
900
600
300
0
10^-1
C = C + C (C = shorted)
iss
gs
gd ds
C =C +C
oss
ds
gd
C =C
rss
gd
C
iss
C
oss
C
rss
※ Notes :
1. V = 0 V
GS
2. f = 1 MHz
10⁰
10¹
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
©2001 Fairchild Semiconductor Corporation
10¹
150℃
10⁰
25℃
10^-1
0
-55℃
※ Notes :
1. V_DS = 30V
2. 250μs Pulse Test
2
4
6
8
10
V_GS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10¹
10⁰
10^-1
0.2
150℃ 25℃
※ Notes :
1. V = 0V
GS
2. 250μs Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
V , Source-Drain voltage [V]
SD
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
V = 40V
DS
V = 100V
DS
8
V = 160V
DS
6
4
2
※ Note : I_D = 11.6 A
0
0
5
10
15
20
25
30
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A1, February 2001