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FQPF12N20L Datasheet, PDF (2/8 Pages) Fairchild Semiconductor – 200V LOGIC N-Channel MOSFET
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Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
∆BVDSS
/ ∆TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = 250 µA
200 --
ID = 250 µA, Referenced to 25°C -- 0.14
IDSS
Zero Gate Voltage Drain Current
VDS = 200 V, VGS = 0 V
VDS = 160 V, TC = 125°C
--
--
--
--
IGSSF
IGSSR
Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V
Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V
--
--
--
--
--
--
1
10
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on) Static Drain-Source
On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = 250 µA
1.0 --
2.0
V
VGS = 10 V, ID = 4.1 A
VGS = 5 V, ID = 4.1 A
--
0.22 0.28
0.25 0.32
Ω
VDS = 30 V, ID = 4.1 A (Note 4) -- 11.3
--
S
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 830 1080 pF
-- 120 155
pF
-- 17
22
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 100 V, ID = 11.6 A,
RG = 25 Ω
-- 15
40
ns
-- 190 390
ns
--
60 130
ns
(Note 4, 5)
-- 120 250
ns
VDS = 160 V, ID = 11.6 A,
-- 16
21
nC
VGS = 5 V
-- 2.8
--
nC
(Note 4, 5)
--
7.6
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
8.2
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
-- 32.8
A
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 8.2 A
--
--
1.5
V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 11.6 A,
-- 128
--
ns
dIF / dt = 100 A/µs
(Note 4)
--
0.56
--
µC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 4.7mH, IAS = 8.2A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 11.6A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2001 Fairchild Semiconductor Corporation
Rev. A1, February 2001
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