FQP6P25 Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – 250V P-Channel MOSFET

Typical Characteristics
Top :
-1V5^GSV
10¹
-10 V
-8.0 V
-7.0 V
-6.5 V
-6.0 V
Bottom : -5.5 V
10⁰
10^-1
10^-1

Notes :
1. 250s Pulse Test
2. T_C = 25
10⁰
10¹
-V_DS , Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
V_GS = - 10V
V_GS = - 20V

Note : T_J = 25
4
8
12
16
20
-I , Drain Current [A]
D
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
1400
1200
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C_rss = C_gd
1000
C
iss
800
C_oss
600
C

Notes :
400
rss
1. V_GS = 0 V
2. f = 1 MHz
200
0
10^-1
10⁰
10¹
-V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
10¹
10⁰
10^-1
2
150

25

-55


Notes :
1. V_DS = -40V
2. 250s Pulse Test
4
6
8
10
-V_GS , Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10¹
10⁰
10^-1
0.0
150
25


Notes :
1. V = 0V
GS
2. 250s Pulse Test
0.5
1.0
1.5
2.0
2.5
3.0
-V_SD , Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
V = -50V
DS
10
V_DS = -125V
V = -200V
DS
8
6
4
2

Note : I_D = -6.0 A
0
0
4
8
12
16
20
24
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
©2000 Fairchild Semiconductor International
Rev. A, April 2000