FQP6P25 Datasheet, PDF (2/8 Pages) Fairchild Semiconductor – 250V P-Channel MOSFET

Electrical Characteristics




T_C = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BV_DSS Drain-Source Breakdown Voltage
V_GS = 0 V, I_D = -250 µA
-250 --
∆BV_{DSS Breakdown Voltage Temperature}
/ ∆T_J Coefficient
I_D = -250 µA, Referenced to 25°C -- -0.1
I_DSS
Zero Gate Voltage Drain Current
V_DS = -250 V, V_GS = 0 V
V_DS = -200 V, T_C = 125°C
--
--
--
--
I_GSSF
Gate-Body Leakage Current, Forward V_GS = -30 V, V_DS = 0 V
--
--
I_GSSR
Gate-Body Leakage Current, Reverse V_GS = 30 V, V_DS = 0 V
--
--
On Characteristics
V_GS(th)
R_DS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
g_FS
Forward Transconductance
V_DS = V_GS, I_D = -250 µA
-3.0 --
V_GS = -10 V, I_D = -3.0 A
-- 0.82
V_DS = -40 V, I_D = -3.0 A (Note 4)
--
3.3
Dynamic Characteristics
C_iss
C_oss
Input Capacitance
Output Capacitance
C_rss
Reverse Transfer Capacitance
V_DS = -25 V, V_GS = 0 V,
f = 1.0 MHz
-- 600
-- 115
--
20
Switching Characteristics
t_d(on)
t_r
t_d(off)
t_f
Q_g
Q_gs
Q_gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V_DD = -125 V, I_D = -6.0 A,
--
R_G = 25 Ω
--
--
(Note 4, 5)
--
V_DS = -200 V, I_D = -6.0 A,
--
V_GS = -10 V
--
(Note 4, 5)
--
13
75
40
50
21
4.7
10.7
--
--
-1
-10
-100
100
-5.0
1.1
--
780
150
25
35
160
90
110
27
--
--
V
V/°C
µA
µA
nA
nA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I_S
Maximum Continuous Drain-Source Diode Forward Current
--
--
-6.0
A
I_SM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
-24
A
V_SD
Drain-Source Diode Forward Voltage V_GS = 0 V, I_S = -6.0 A
--
--
-5.0
V
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
V_GS = 0 V, I_S = -6.0 A,
-- 170
--
ns
dI_F / dt = 100 A/µs
(Note 4)
--
1.1
--
µC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 24mH, I_AS = -6.0A, V_DD = -50V, R_G = 25 Ω, Starting T_J = 25°C
3. I_SD
-6.0A, di/dt
300A/µs, V_DD
BV_DSS, Starting T_J = 25°C
4. Pulse Test : Pulse width
300µs, Duty cycle
2%
5. Essentially independent of operating temperature
©2000 Fairchild Semiconductor International
Rev. A, April 2000