FQP4N90 Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – 900V N-Channel MOSFET

Typical Characteristics
10^{1 Top :}
V_GS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
10⁰
10^-1
10^-1
※ Notes :
1. 250μ s Pulse Test
2. T = 25℃
C
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
10
8
V_GS = 10V
6
V_GS = 20V
4
2
※ Note : T_J = 25℃
0
0
3
6
9
12
I , Drain Current [A]
D
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
1500
1200
900
600
300
C
iss
C
oss
C
rss
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C_rss = C_gd
※ Notes :
1. V_GS = 0 V
2. f = 1 MHz
0
10^-1
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
10¹
10⁰
10^-1
2
150℃
25℃
-55℃
※ Notes :
1.
2.
V25_DS0μ=s50PVulse
Test
4
6
8
10
V_GS , Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10¹
10⁰
10^-1
0.2
150℃
25℃
※ Notes :
1.
2.
2V5^GS0μ^=s0VPulse
Test
0.4
0.6
0.8
1.0
1.2
1.4
V_SD , Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and
Temperature
12
V_DS = 180V
10
V = 450V
DS
8
V = 720V
DS
6
4
2
※ Note : I_D = 4.2 A
0
0
5
10
15
20
25
30
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
©2001 Fairchild Semiconductor Corporation
Rev. B, October 2001