English
Language : 

FQP4N90 Datasheet, PDF (2/8 Pages) Fairchild Semiconductor – 900V N-Channel MOSFET
◁
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
∆BVDSS
/ ∆TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = 250 µA
900 --
ID = 250 µA, Referenced to 25°C -- 0.9
IDSS
Zero Gate Voltage Drain Current
VDS = 900 V, VGS = 0 V
VDS = 720 V, TC = 125°C
--
--
--
--
IGSSF
IGSSR
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
--
--
--
--
--
--
10
100
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 2.1 A
3.0 --
5.0
V
-- 2.7 3.3
Ω
VDS = 50 V, ID = 2.1 A (Note 4) --
3.5
--
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 860 1100 pF
--
90 120
pF
-- 9.5 12.5 pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 450 V, ID = 4.2 A,
RG = 25 Ω
-- 25
60
ns
--
70 150
ns
--
45 100
ns
(Note 4, 5)
--
40
90
ns
VDS = 720 V, ID = 4.2 A,
-- 24
30
nC
VGS = 10 V
-- 5.8
--
nC
(Note 4, 5) --
11.5
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
4.2
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
-- 16.8
A
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 4.2 A
--
--
1.4
V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 4.2 A,
-- 440
--
ns
dIF / dt = 100 A/µs
(Note 4)
--
3.3
--
µC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 61mH, IAS = 4.2A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 4.2A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2001 Fairchild Semiconductor Corporation
Rev. B, October 2001
 ▷