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| FQP45N15V2 Datasheet, PDF (3/10 Pages) Fairchild Semiconductor – 150V N-Channel MOSFET | |||
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Typical Characteristics
Top :
VGS
15.0 V
102
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
101
â» Notes :
1. 250µ s Pulse Test
2. TC = 25â
10-1
100
101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
0.14
0.12
0.10
VGS = 10V
0.08
0.06
0.04
0.02
0
VGS = 20V
â» Note : TJ = 25â
20
40
60
80 100 120 140 160 180
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
6000
5000
4000
3000
2000
1000
0
10-1
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Ciss
Coss
Crss
â» Notes ;
1. VGS = 0 V
2. f = 1 MHz
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2004 Fairchild Semiconductor Corporation
102
175oC
25oC
101
-55oC
100
10-1
2
â» Notes :
1. VDS = 40V
2. 250µs Pulse Test
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
102
101
100
10-1
0.2
175â
25â
â» Notes :
1. VGS = 0V
2. 250µ s Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10
VDS = 30V
VDS = 75V
8
VDS = 120V
6
4
2
â» Note : ID = 45A
0
0
10
20
30
40
50
60
70
80
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A, October 2004
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