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FQP45N15V2 Datasheet, PDF (2/10 Pages) Fairchild Semiconductor – 150V N-Channel MOSFET
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Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
150 --
∆BVDSS Breakdown Voltage Temperature
/ ∆TJ Coefficient
ID = 250 µA, Referenced to 25°C -- 0.21
IDSS
Zero Gate Voltage Drain Current
VDS = 150 V, VGS = 0 V
VDS = 120 V, TC = 150°C
--
--
--
--
IGSSF
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V
--
--
IGSSR
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
--
--
--
--
1
10
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on)
Static Drain-Source
On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = 250 µA
2.0 --
4.0
V
VGS = 10 V, ID = 22.5 A
-- 0.034 0.04
Ω
VDS = 40 V, ID = 22.5 A (Note 4) --
40
--
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 2330 3030 pF
-- 510 670
pF
-- 135 176
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 75 V, ID = 45 A,
RG = 25 Ω
--
22
54
ns
-- 232 474
ns
-- 224 458
ns
(Note 4, 5)
--
246
502
ns
VDS = 120 V, ID = 45 A,
--
72
94
nC
VGS = 10 V
--
13
--
nC
(Note 4, 5) --
31
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
45
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
180
A
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 45 A
--
--
1.4
V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 45 A,
-- 176
--
ns
dIF / dt = 100 A/µs
(Note 4) --
1.19
--
µC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 0.74mH, IAS = 45A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 45A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2004 Fairchild Semiconductor Corporation
Rev. A, October 2004
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