FQP3P20 Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – 200V P-Channel MOSFET

Typical Characteristics
10¹
V
Top : -15.0^GSV
-10.0 V
-8.0 V
-7.0 V
-6.5 V
-6.0 V
Bottom : -5.5 V
10⁰
10^-1

Notes :
1. 250s Pulse Test
2. T_C = 25
10^-1
10⁰
10¹
-V_DS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
10
8
V_GS = - 10V
6
V = - 20V
GS
4
2

Note : T_J = 25
0
0
2
4
6
8
-I , Drain Current [A]
D
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
400
C = C + C (C = shorted)
iss gs gd ds
C =C +C
oss ds gd
C =C
rss gd
300
C
iss
C_oss
200

Notes :
C_rss
1. V_GS = 0 V
2. f = 1 MHz
100
0
10^-1
10⁰
10¹
-V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2000 Fairchild Semiconductor International
10¹
10⁰
10^-1
2
150

25

-55


Notes :
1. V_DS = -40V
2. 250s Pulse Test
4
6
8
10
-V_GS , Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10¹
10⁰
150
₂₅

10^-1
0.4

Notes :
1. V = 0V
GS
2. 250s Pulse Test
0.8
1.2
1.6
2.0
2.4
2.8
-V_SD , Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
V_DS = -40V
V_DS = -100V
8
V_DS = -160V
6
4
2

Note : I_D = -2.8 A
0
0
1
2
3
4
5
6
7
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A, April 2000