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FQP3P20 Datasheet, PDF (2/8 Pages) Fairchild Semiconductor – 200V P-Channel MOSFET
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Electrical CharacteristicsTC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
∆BVDSS
/ ∆TJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = -250 µA
ID = -250 µA, Referenced to 25°C
VDS = -200 V, VGS = 0 V
VDS = -160 V, TC = 125°C
VGS = -30 V, VDS = 0 V
VGS = 30 V, VDS = 0 V
-200
--
--
--
--
--
--
-0.18
--
--
--
--
--
--
-1
-10
-100
100
V
V/°C
µA
µA
nA
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = -250 µA
-3.0 --
-5.0
V
VGS = -10 V, ID = -1.4 A
-- 2.06 2.7
Ω
VDS = -40 V, ID = -1.4 A (Note 4)
--
1.23
--
S
Dynamic Characteristics
Ciss
Coss
Input Capacitance
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = -25 V, VGS = 0 V,
f = 1.0 MHz
-- 190 250 pF
--
45
60
pF
-- 7.5
10
pF
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = -100 V, ID = -2.8 A,
RG = 25 Ω
--
8.5
25
ns
--
35
80
ns
--
12
35
ns
(Note 4, 5)
--
25
60
ns
VDS = -160 V, ID = -2.8 A,
-- 6.0 8.0 nC
VGS = -10 V
-- 1.7
--
nC
(Note 4, 5)
--
2.9
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
-2.8
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
-- -11.2 A
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = -2.8 A
--
--
-5.0
V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = -2.8 A,
-- 100
--
ns
dIF / dt = 100 A/µs
(Note 4)
--
0.34
--
µC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 29mH, IAS = -2.8A, VDD = -50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD  -2.8A, di/dt  300A/µs, VDD  BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width  300µs, Duty cycle  2%
5. Essentially independent of operating temperature
©2000 Fairchild Semiconductor International
Rev. A, April 2000
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