FQP10N50CF Datasheet, PDF (3/10 Pages) Fairchild Semiconductor – 500V N-Channel MOSFET

Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
Top : 15V.0^GSV
10.0 V
8.0 V
7.0 V
10¹
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
10⁰
10^-1
10^-1
œ Notes :
1. 250µs Pulse Test
2. T_C = 25
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
10¹
150^oC
25^oC
10⁰
-55^oC
10^-1
2
œ Notes :
1. V_DS = 40V
2. 250µs Pulse Test
4
6
8
10
V_GS, Gate-Source Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
1.5
V_GS = 10V
1.0
V_GS = 20V
0.5
œ Note : T_J = 25
0
5
10
15
20
25
30
35
I_D, Drain Current [A]
Figure 5. Capacitance Characteristics
10¹
10⁰
10^-1
0.2
150
25
œ Notes :
1. V_GS = 0V
2. 250µs Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
V_SD, Source-Drain voltage [V]
Figure 6. Gate Charge Characteristics
4000
3000
2000
1000
0
10^-1
C
oss
C
iss
C = C + C (C = shorted)
iss
gs
gd ds
C =C +C
oss
ds
gd
C =C
rss
gd
* Note :
1. V = 0 V
GS
2. f = 1 MHz
C
rss
10⁰
10¹
V , Drain-Source Voltage [V]
DS
12
V = 100V
DS
10
V = 250V
DS
V = 400V
8
DS
6
4
2
* Note : I = 10A
D
0
0
10
20
30
40
50
Q , Total Gate Charge [nC]
G
3
FQP10N50CF / FQPF10N50CF Rev. A
www.fairchildsemi.com