FQP10N50CF Datasheet, PDF (1/10 Pages) Fairchild Semiconductor – 500V N-Channel MOSFET

FQP10N50CF / FQPF10N50CF
500V N-Channel MOSFET
December 2006
FRFET^TM
Features
• 10A, 500V, R_DS(on) = 0.61 Ω @V_GS = 10 V
• Low gate charge (typical 43 nC)
• Low Crss (typical 16pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Fast recovery body diode
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switched mode power supplies and active power factor
correction.
D
GDS
TO-220
FQP Series
GD S
G
TO-220F
FQPF Series
S
Absolute Maximum Ratings
Symbol
Parameter
V_DSS
I_D
Drain-Source Voltage
Drain Current
- Continuous (T_C = 25°C)
- Continuous (T_C = 100°C)
I_DM
Drain Current
- Pulsed
(Note 1)
V_GSS
E_AS
I_AR
E_AR
dv/dt
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 2)
(Note 1)
(Note 1)
(Note 3)
P_D
Power Dissipation (T_C = 25°C)
- Derate above 25°C
T_J, T_STG
T_L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
FQP10N50CF FQPF10N50CF
500
10
10*
6.35
6.35*
40
40*
± 30
388
10
14.3
4.5
143
48
1.14
0.38
-55 to +150
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Symbol
Parameter
R_θJC
R_θJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
FQP10N50CF
0.87
62.5
FQPF10N50CF
2.58
62.5
Unit
°C/W
°C/W
© 2006 Fairchild Semiconductor Corporation
1
FQP10N50CF / FQPF10N50CF Rev. A
www.fairchildsemi.com