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| FQL40N50F Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – 500V N-Channel MOSFET | |||
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Typical Characteristics
VGS
102 Top :
15 V
10 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
101
100
10-1
â» Notes :
1. 250μ s Pulse Test
2. T = 25â
C
100
101
VDS , Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
0.4
0.3
VGS = 10V
VGS = 20V
0.2
0.1
â» Note : TJ = 25â
0
30
60
90
120
150
180
ID , Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
12000
10000
8000
6000
C
iss
C
oss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
4000
2000
â» Notes :
C
rss
1. VGS = 0 V
2. f = 1 MHz
0
10-1
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
102
101
100
10-1
2
150â
25â
-55â
â» Notes :
1. VDS = 50V
2. 250μ s Pulse Test
4
6
8
10
V , Gate-Source Voltage [V]
GS
Figure 2. Transfer Characteristics
102
101
100
10-1
0.2
150â 25â
â» Notes :
1.
2.
2V5GS0μ=s0PVulse
Test
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
V , Source-Drain Voltage [V]
SD
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
V = 100V
DS
10
V = 250V
DS
V = 400V
DS
8
6
4
2
â» Note : ID = 40 A
0
0
30
60
90
120
150
180
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
©2001 Fairchild Semiconductor Corporation
Rev. A2, September 2001
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