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| FQH44N10 Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – 100V N-Channel MOSFET | |||
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Typical Characteristics
Top :
102
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
101
100
10-1
â» Notes :
1. 250μ s Pulse Test
2. TC = 25â
100
101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
0.15
0.12
V = 10V
GS
0.09
V = 20V
GS
0.06
0.03
0.00
0
â» Note : TJ = 25â
30
60
90
120
150
180
ID , Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
4000
3500
3000
2500
2000
1500
1000
500
0
10-1
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Ciss
C
oss
C
rss
â» Notes :
1. VGS = 0 V
2. f = 1 MHz
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
102
101
175â
100
10-1
2
25â
-55â
â» Notes :
1. VDS = 40V
2. 250μ s Pulse Test
4
6
8
10
V , Gate-Source Voltage [V]
GS
Figure 2. Transfer Characteristics
102
101
100
175â
10-1
0.2 0.4
25â
â» Notes :
1. VGS = 0V
2. 250μ s Pulse Test
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V , Source-Drain Voltage [V]
SD
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
V = 50V
DS
V = 80V
DS
8
6
4
2
â» Note : ID = 43.5A
0
0
10
20
30
40
50
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
©2004 Fairchild Semiconductor Corporation
Rev. A, February 2004
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