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FQH44N10 Datasheet, PDF (2/8 Pages) Fairchild Semiconductor – 100V N-Channel MOSFET
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Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
∆BVDSS
/ ∆TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = 250 µA
100 --
ID = 250 µA, Referenced to 25°C -- 0.1
IDSS
Zero Gate Voltage Drain Current
VDS = 100 V, VGS = 0 V
VDS = 80 V, TC = 150°C
--
--
--
--
IGSSF
IGSSR
Gate-Body Leakage Current, Forward VGS = 25 V, VDS = 0 V
Gate-Body Leakage Current, Reverse VGS = -25 V, VDS = 0 V
--
--
--
--
--
--
1
10
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = 250 µA
2.0 --
4.0
V
VGS = 10 V, ID = 24 A
-- 0.03 0.039 Ω
VDS = 40 V, ID = 24 A
(Note 4) --
31
--
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 1400 1800 pF
-- 425 550
pF
--
85
110
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 50 V, ID = 43.5 A,
RG = 25 Ω
-- 19
45
ns
-- 190 390
ns
--
90 190
ns
(Note 4, 5)
--
100
210
ns
VDS = 80 V, ID = 43.5 A,
-- 48
62
nC
VGS = 10 V
-- 9.0
--
nC
(Note 4, 5) --
24
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
48
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
192
A
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 48 A
--
--
1.5
V
trr
Reverse Recovery Time
VGS = 0 V, IS = 43.5 A,
-- 98
--
ns
Qrr
Reverse Recovery Charge
dIF / dt = 100 A/µs
(Note 4) --
360
--
nC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 0.345mH, IAS = 48A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 43.5A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2004 Fairchild Semiconductor Corporation
Rev. A, February 2004
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