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| FOD410 Datasheet, PDF (3/12 Pages) Fairchild Semiconductor – 6-Pin DIP Zero-Cross Triac Drivers | |||
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Electrical Characteristics (TA = 25°C Unless otherwise specified)
Individual Component Characteristics
Symbol
Parameters
Test Conditions
Device
EMITTER
VF Input Forward Voltage IF = 20mA
All
IR Reverse Leakage
VR = 6V
All
Current
DETECTOR
ID(RMS) Peak Blocking Current, IF = 0,
Either Direction
TA = 100°C(2)
VD = 800V
VD = 600V
FOD4108,
FOD4118
FOD410,
FOD4116
IR(RMS) Reverse Current
TA = 100°C
VD = 800V
FOD4108,
FOD4118
dv/dt Critical Rate of Rise of
Off-State Voltage
IF = 0(4) (Fig. 11)
VD = 600V
FOD410,
FOD4116
Min. Typ.* Max
1.25 1.5
0.0001 10
3
100
3
100
10,000
Units
V
µA
µA
µA
V/µs
Transfer Characteristics
Symbol DC Characteristics
Test Conditions
IFT LED Trigger Current Main Terminal Voltage = 5V(3)
Device
FOD410,
FOD4108
Min.
Typ.* Max. Units
0.65 2.0 mA
FOD4116,
FOD4118
0.65 1.3
VTM Peak On-State Voltage, ITM = 300 mA peak, IF = rated IFT
All
Either Direction
2.2 3
V
IH Holding Current,
Either Direction
VT = 3V
All
200 500 µA
IL
Latching Current
VT = 2.2V
All
5
mA
tON Turn-On Time
PF = 1.0,
VRM = VDM = 565 VAC FOD4108
60
µs
IT = 300mA
VRM = VDM = 424 VAC FOD410,
FOD4116,
FOD4118
tOFF Turn-Off Time
VRM = VDM = 565 VAC FOD4108
52
µs
VRM = VDM = 424 VAC FOD410,
FOD4116,
FOD4118
dv/dtcrq Critical Rate of Rise of VD = 0.67 VDRM, Tj = 25°C
Voltage at Current
Commutation
di/dtcrq ⤠15 A/ms Tj = 80°C
All
10,000
5,000
V/µs
di/dtcr Critical Rate of Rise of
On-State Current
All
8 A/µs
dV(IO)/dt Critical Rate of Rise of IT = 0A,
Coupled Input/Output VRM = VDM = 424VAC
Voltage
All
10,000
V/µs
*Typical values at TA = 25°C
©2004 Fairchild Semiconductor Corporation
FOD410, FOD4108, FOD4116, FOD4118 Rev. 1.1.4
3
www.fairchildsemi.com
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