FMMT549_06 Datasheet, PDF (3/5 Pages) Fairchild Semiconductor – PNP Low Saturation Transistor

Typical Characteristics
Collector- Emitter Voltage vs
Collector current
800
4mA
700
3.5mA
600
3mA
500
2.5mA
400
2mA
300
1.5mA
200
1mA
100
0
0
Ib=0.5mA
1
2
3
4
5
Collector-Emitter Voltage, Vce[V]
Current Gain vs Collector Current
600
V_ce = 2.0V
500
400
125°C
300
25°C
200
- 40°C
100
0
0.0001 0.001
0.01
0.1
1
10
I _C - COLLECTOR CURRENT (A)
Base-Emitter On Voltage vs
Collector Current
1.6
Vce = 2.0V
1.4
1.2
1
- 40 °C
0.8
0.6
25 °C
0.4
125 °C
0.2
0.0001 0.001
0.01
0.1
1
10
I _C - COLLECTOR CURRENT (A)
Collector-Emitter Saturation
Voltage vs Collector Current
1.2
β = 10
1
125°C
- 40°C
0.8
0.6
25°C
0.4
0.2
0
0.01
0.1
1
10
I _C - COLLECTOR CURRENT (A)
Base-Emitter Saturation
Voltage vs Collector Current
1.6
β = 10
1.4
1.2
1
- 40 °C
0.8
0.6
25 °C
125 °C
0.4
0.2
0.001
0.01
0.1
1
10
I _C - COLLECTOR CURRENT (A)
Input/Output Capacitance vs
Reverse Bias Voltage
120
f V=ce1=.02M.0HVz
100
C ibo
80
60
40
Cobo
20
0
0.1
0.5 1
10 20 50 100
V _CE - COLLECTOR VOLTAGE (V)
FMMT549 Rev. C
3
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