FMMT549_06 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – PNP Low Saturation Transistor

FMMT549
PNP Low Saturation Transistor
Features
• ThIs device is designed with high current gain and low saturation voltage
with collector currents up to 2A continous.
• Sourced from process PB.
3
2
SOT-23
1
1. Base 2. Emitter 3. Collector
August 2006
tm
Absolute Maximum Ratings * T_a = 25°C unless otherwise noted
Symbol
Parameter
Value
V_CEO
Collector-Emitter Voltage
-30
V_CBO
Collector-Base Voltage
-35
V_EBO
Emitter-Base Voltage
-5
I_C
Collector Current - Continuous
-1
- Peak Pulse Current
-2
T_J
Junction Temperature
150
T_STG
Storage Temperature Range
- 55 ~ 150
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Unit
V
V
V
A
A
°C
°C
Thermal Characteristics *
Symbol
Parameter
P_D
Total Device Dissipation, by R_θJA
Derate above 25°C
R_θJA
Thermal Resistance, Junction to Ambient
* Device mounted on FR-4 PCB 4.5” X 5”, mounting pad 0.02 in² of 2 oz copper.
Value
500
4
250
Unit
mW
mW/°C
°C/W
©2006 Fairchild Semiconductor Corporation
1
FMMT549 Rev. C
www.fairchildsemi.com