FMBS5551 Datasheet, PDF (3/6 Pages) Fairchild Semiconductor – NPN General Purpose Amplifier

Typical Characteristics
vs Collector Current
250
200
125 °C
150
100
50 ^{V CE = 5V}
25 °C
- 40 °C
0
0.1 0.2 0.5 1 2
5 10 20 50 100
I _C - COLLECTOR CURRENT (mA)
Figure 1. Typical Pulsed Current Gain
vs Collector Current
V_βo^βltage vs Collector Current
1
β
= 10
β
0.8
β
- 40 °C
25 °C
0.6
125 °C
β
0.4
0.2
0
1
10
100 200
I - COLLECTOR CURRE NT (mA)
Figure 3. Base-Emitter Saturation Voltage
vs Collector Current
50
V_CB= 100V
10
1
25
50
75
10 0
12 5
T_A - AMBIE NT TEMP ERATURE (_°C)
Figure 5. Collector Cutoff Current
vs Ambient Temperature
Voltage vs Collector Current
0.5
0.4
β = 10
0.3
β
β _ββ
0.2
0.1
125 °C
25 °C
- 40 °C
0
1
β
10
100 200
I _C - COLLECTOR CURRE NT (mA)
Figure 2. Collector-Emitter Saturation Voltage
vs Collector Current
1
0.8
0.6
0.4
0.2
0
0.1
Collector Current
- 40 °C
25 °C
125 °C
V_CE = 5V
1
10
100 200
I _C - COLLECTOR CURRENT (mA)
Figure 4. Base-Emitter On Voltage
vs Collector Current
Between Emitter-Base
260
I _C = 1.0 mA
240
220
200
Ω
180
160
0.1
Ω
Ω
1
10
Ω ₁₀₀
1000
RESISTANCEΩ(kΩ )
Figure 6. Collector-Emitter Breakdown Voltage
with Resistance Between Emitter-Base
©2004 Fairchild Semiconductor Corporation
Rev. A1, November 2004