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| FMBS5551 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – NPN General Purpose Amplifier | |||
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FMBS5551
NPN General Purpose Amplifier
⢠This device is designed for general purpose high voltage amplifiers
and gas discharge display drivers.
NC
C1
E
B
C
pin #1 C
SuperSOTTM-6 single
Mark: .3S1
Absolute Maximum Ratings* Ta=25°C unless otherwise noted
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
- Continuous
TJ, TSTG
Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Value
160
180
6.0
600
- 55 ~ 150
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
mA
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min. Max. Units
Off Characteristics
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
Collector-Emitter Sustaining Voltage *
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
IEBO
Emitter Cut-off Current
On Characteristics
IC = 1.0mA, IB = 0
IC = 100µA, IE = 0
IE = 10µA, IC = 0
VCB = 120V, IE = 0
VCB = 120V, IE = 0, Ta = 100°C
VEB = 4.0V, IC = 0
160
V
180
V
6.0
V
50
nA
50
µA
50
nA
hFE
DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage
Small Signal Characteristics
IC = 1.0mA, VCE = 5.0V
IC = 10mA, VCE = 5.0V
IC = 50mA, VCE = 5.0V
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
80
80
250
30
0.15
0.2
V
1.0
1.0
V
fT
Cobo
Cibo
hfe
NF
Current Gain Bandwidth Product
Output Capacitance
Input Capacitance
Small Single Current Gain
Noise Figure
* Pulse Test: Pulse Width ⤠300µs, Duty Cycle ⤠2.0%
IC = 10mA, VCE = 10, f = 100MHz
100 300 MHz
VCE = 10V, IC = 0, f = 1.0MHz
6.0
pF
VBE = 0.5V, IC = 0, f = 1.0MHz
20
pF
IC = 1.0mA, VCE = 10V, f = 1.0KHz 50
250
IC = 250µA, VCE = 5.0V,
RS = 1.0Kâ¦, f = 10 Hz to 15.7KHz
8.0
dB
©2004 Fairchild Semiconductor Corporation
Rev. A1, November 2004
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