FMBS5401 Datasheet, PDF (3/6 Pages) Fairchild Semiconductor – PNP General Purpose Amplifier

Typical Characteristics
200
V_CE = 5V
150
125 ^oC
100
25 ^oC
50
- 40 ^oC
0
1E-4
1E-3
0.01
0.1
1
I_C - COLLECTOR CURRENT (A)
Figure 1. Typical Pulsed Current Gain
vs Collector Current
1.0
0.8
0.6
0.4
0.2
0.1
- 40 ^oC
25 ^oC
125 ^oC
β
β = 10
1
10 β
100
I_C - COLLECTOR CURRENT (mA)
Figure 3. Base-Emitter Saturation
Voltage vs Collector Current
100
V _CB = 10 0V
10
1
0.1
25
50
75
100
125
150
T A - AM BIENT TE MPE RATURE (°C)
Figure 5. Collector-Cutoff Current
vs Ambient Temperature
0.4
β ^{β = 10}
0.3
0.2
β
0.1
0.0
0.1
125 ^oC
25 ^oC
- 40 ^oC
1
10
100
I_C - COLLECTOR CURRENT (mA)
Figure 2. Collector-Emitter Saturation
Voltage vs Collector Current
1.0
0.8
- 40 ^oC
25 ^oC
0.6
125 ^oC
0.4
0.2
0.1
V_CE = 5V
1
10
100
I_C - COLLECTOR CURRENT (mA)
Figure 4. Base-Emitter On Voltage vs
Collector Current
220
210
200
190
180
170
0.1
1
10
100
1000
RESISTANCE
Ω
(kΩ)
Figure 6. Collector-Emitter Breakdown Voltage
with Resistance Between Emitter-Base
©2004 Fairchild Semiconductor Corporation
Rev. A, Octorber 2004