FMBS5401 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – PNP General Purpose Amplifier

FMBS5401
PNP General Purpose Amplifier
• This device is designed as a general purpose amplifier and switch for
applications requiring high voltage.
NC
C1
E
B
C
pin #1 ^C
SuperSOT^TM-6 single
Mark: .4S1
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings* T_a=25°C unless otherwise noted
Symbol
Parameter
V_CEO
Collector-Emitter Voltage
V_CBO
Collector-Base Voltage
V_EBO
Emitter-Base Voltage
I_C
Collector Current
- Continuous
T_J, T_STG
Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Value
-150
-160
-5.0
-600
-55 ~ 150
Notes:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
mA
°C
Electrical Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
BV_CEO
BV_CBO
BV_EBO
I_CBO
Collector-Emitter Breakdown Voltage *
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
I_EBO
Emitter Cutoff Current
On Characteristics *
I_C = -1.0mA, I_B = 0
I_C = -100µA, I_E = 0
I_E = -10µA, I_C = 0
V_CB = -120V, I_E = 0
V_CB = -120V, I_E = 0, T_a = 100°C
V_EB= -3.0V, I_C=0
h_FE
DC Current Gain
V_CE (sat) Collector-Emitter Saturation Voltage
V_BE (sat) Base-Emitter Saturation Voltage
Small Signal Characterics
I_C = -1.0mA, V_CE = -5.0V
I_C = -10mA, V_CE = -5.0V
I_C = -50mA, V_CE = -5.0V
I_C = -10mA, I_B = -1.0mA
I_C = -50mA, I_B = -5.0mA
I_C = -10mA, I_B = -1.0mA
I_C = -50mA, I_B = -5.0mA
f_T
Current Gain Bandwidth Product
I_C = -10mA, V_CE = -10V,
f = 100MHz
C_ob
Output Capacitance
N_F
Noise Figure
V_CB = -10V, I_E = 0, f = 1MHz
I_C = -250µA, V_CE = -5.0V, R_S = 1.0KΩ
f = 10Hz to 15.7KHz
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
Min.
-150
-160
-5.0
50
60
50
100
Max. Units
V
V
V
-50
nA
-50
µA
-50
nA
240
-0.2
V
-0.5
V
-1.0
V
-1.0
V
300 MHz
6.0
pF
8.0
dB
©2004 Fairchild Semiconductor Corporation
Rev. A, Octorber 2004