FGS15N40LTF Datasheet, PDF (3/6 Pages) Fairchild Semiconductor – High Input Impedance

180 ^{Commom Emitter}
T_C = 25℃
150
6V
5V
4V
120
V_GE = 3V
90
60
30
0
0
2
4
6
8
Collector-Emitter Voltage, V_CE [V]
Fig 1. Typical Output Chacracteristics
10 _{Common Emitter}
T_C=-40℃
8
6
4
130A
100A
2
I_C=70A
0
0
1
2
3
4
5
6
Gate-Emitter Voltage ,V_GE [V]
Fig 3. Saturation Voltage vs. V_GE
7
Common Emitter
V_GE=4.0V
6
5
Ic=130A
4
Ic=100A
3
Ic=70A
2
-50
0
50
100
150
Case Temperature,T_C [℃]
Fig 2. Saturation Voltage vs. Case Temerature
at Variant Current Level
10
Common Emitter
T =25℃
C
8
6
130A
4
100A
2
I_C=70A
0
0
1
2
3
4
5
6
Gate-Emitter Voltage ,V_GE [V]
Fig 4. Saturation Voltage vs. V_GE
10
Common Emitter
T_C=150℃
8
6
130A
4
100A
2
I_C=70A
0
0
1
2
3
4
5
6
Gate-Emitter Voltage ,V [V]
GE
Fig 5. Saturation Voltage vs. V_GE
©2001 Fairchild Semiconductor Corporation
10000
Cies
1000
Common Emitter
V =0V f=1MHz T =25℃
GE
C
100
Coes
Cres
10
0
10
20
30
40
Collector-Emitter Voltage,V_CE [V]
Fig 6. Capacitance Characteristics
FGS15N40L Rev. A1