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FGS15N40LTF Datasheet, PDF (2/6 Pages) Fairchild Semiconductor – High Input Impedance
Electrical Characteristics of IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVCES
ICES
IGES
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
G-E leakage Current
On Characteristics
VGE(th)
VCE(sat)
G-E threshold Voltage
C-E Saturation Voltage
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Notes : Recommendation of Rg Value : Rg ≥ 15Ω
VGE = 0V, IC = 1mA
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
IC = 0V, IC = 1mA
IC = 130A , VGE = 4.0V
VGE = 0V , VCE = 30V
f = 1MHz
VCC = 300V , IC = 130A
VGE = 4.0V , RG = 15Ω *
Resistive Load
Min. Typ. Max. Units
450
--
--
V
--
--
10
µA
--
-- ± 0.1 µA
-
-
1.4
V
2.0
4.5
8.0
V
-- 3800 --
pF
--
45
--
pF
--
30
--
pF
--
0.15
--
us
--
1.5
--
us
--
0.15 0.3
us
--
1.5 3.0
us
©2001 Fairchild Semiconductor Corporation
FGS15N40L Rev. A1