FGPF4533 Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – 330V, PDP IGBT

Typical Performance Characteristics
Figure 1. Typical Output Characteristics
200
T_C = 25^oC
20V
12V
10V
15V
150
V_GE = 8V
100
Figure 2. Typical Output Characteristics
200
T_C = 125^oC
150
20V
15V
12V
10V
100
V_GE = 8V
50
50
0
0
1
2
3
4
5
6
Collector-Emitter Voltage, V_CE [V]
Figure 3. Typical Saturation Voltage
Characteristics
200
Common Emitter
V_GE = 15V
150 ^{TC = 25oC}
T_C = 125^oC
100
0
0
1
2
3
4
5
6
Collector-Emitter Voltage, V_CE [V]
Figure 4. Transfer Characteristics
200
Common Emitter
V_CE = 10V
150
T_C = 25^oC
T_C = 125^oC
100
50
50
0
0
1
2
3
4
5
Collector-Emitter Voltage, V_CE [V]
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
1.7
Common Emitter
1.6 ^VGE ^{= 15V}
1.5
50A
1.4
1.3
30A
1.2
I_C = 20A
1.1
1.0
0 20 40 60 80 100 120 140
Collector-EmitterCase Temperature, T_C [^oC]
0
0
2
4
6
8
10 12
Gate-Emitter Voltage,V_GE [V]
Figure 6. Saturation Voltage vs. V_GE
20
Common Emitter
T_C = 25^oC
16
12
50A
8
30A
4
I_C = 20A
00
4
8
12
16
20
Gate-Emitter Voltage, V_GE [V]
FGPF4533 Rev. B
3
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