FGPF4533 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – 330V, PDP IGBT

FGPF4533
330V, PDP IGBT
Features
• High current capability
• Low saturation voltage: V_{CE (sat)} =1.55 V @ IC = 50 A
• High input impedance
• Fast switching
• RoHS compliant
Applications
• PDP System
August 2010
General Description
Using Novel Trench IGBT Technology, Fairchild’s new series of
trench IGBTs offer the optimum performance for PDP applica-
tions where low conduction and switching losses are essential.
GC E
TO-220F
(Retractable)
Absolute Maximum Ratings
Symbol
V_CES
V_GES
I_{C pulse(1)*}
P_D
T_J
T_stg
T_L
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ T_C = 25^oC
@ T_C = 25^oC
@ T_C = 100^oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Characteristics
Symbol
Parameter
R_θJC(IGBT)
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Notes:
(1) Half Sine Wave, D < 0.01, pluse width < 5μsec
* Ic_pluse limited by max Tj
Ratings
330
± 30
200
28.4
11.4
-55 to +150
-55 to +150
300
Typ.
-
-
Max.
4.4
62.5
Units
V
V
A
W
W
o_C
o_C
o_C
Units
o_C/W
o_C/W
©2010 Fairchild Semiconductor Corporation
1
FGPF4533 Rev. B
www.fairchildsemi.com