FGPF30N30 Datasheet, PDF (3/7 Pages) Fairchild Semiconductor – 300V, 30A PDP IGBT

Typical Performance CharacteristicsTypical Saturation VoltageCharacteristics
Figure 1. Typical Output Characteristics
80
20V
70
12V
15V
60
T_C = 25^oC
10V
50
40
30
V_GE = 8V
20
10
0
0
2
4
6
8
10
Collector-Emitter Voltage, V_CE [V]
Figure 3. Saturation Voltage
80
60
Common Emitter
V_GE = 15V
T_C = 25^oC
T_C = 125^oC
Figure 2. Typical Output Characteristics
80
20V
70
15V
12V
60
T_C = 125^oC
10V
50
40
30
V_GE = 8V
20
10
0
0
2
4
6
8
10
Collector-Emitter Voltage, V_CE [V]
Figure 4. Transfer Characteristics
80
Common Emitter
V_CE = 20V
T_C = 25^oC
60 _{TC = 125}o_C
40
40
20
20
0
0
2
4
6
Collector-Emitter Voltage, V_CE [V]
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
2.0
30A
0
0 2 4 6 8 10 12 14 16
Gate-Emitter Voltage,V_GE [V]
Figure 6. Saturation Voltage vs.V_GE
20
Common Emitter
T = 25^oC
16
C
1.5
20A
12
10A
1.0
Common Emitter
V_GE = 15V
0.5
25
50
75
100
125
Case Temperature, T_C [^oC]
8
20A
4
I_C = 10A
30A
0
0
4
8
12
16
20
Gate-Emitter Voltage, V_GE [V]
3
www.fairchildsemi.com
FGPF30N30 Rev. A