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FGPF30N30 Datasheet, PDF (2/7 Pages) Fairchild Semiconductor – 300V, 30A PDP IGBT
◁
Package Marking and Ordering Information
Device Marking
FGPF30N30
Device
FGFP30N30TU
Package
TO-220F
Packaging
Type
Rail / Tube
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVCES
Collector-Emitter Breakdown Voltage
ΔBVCES/
ΔTJ
ICES
IGES
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
VGE = 0V, IC = 250uA
VGE = 0V, IC = 250uA
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat) Collector to Emitter Saturation Voltage
IC = 250uA, VCE = VGE
IC =10A, VGE = 15V
IC =20A, VGE = 15V
IC = 30A, VGE = 15V
TC = 25oC
IC = 30A, VGE = 15V
TC = 125oC
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Qg
Qge
Qgc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
VCC = 200 V, IC = 20A
RG = 20Ω, VGE = 15V
Resistive Load, TC = 25oC
VCC = 200 V, IC = 20A
RG = 20Ω, VGE = 15V
Resistive Load, TC = 125oC
VCE = 200 V, IC = 20A
VGE = 15V
Qty per Tube
50ea
Max Qty
per Box
-
Min. Typ. Max. Units
300
--
--
V
--
0.6
--
V/oC
--
--
100
uA
--
--
± 250
nA
2.5
4.0
5.0
V
--
1.2
1.5
V
--
1.4
--
V
--
1.8
--
V
--
1.9
--
V
--
685
--
pF
--
95
--
pF
--
30
--
pF
--
10
--
ns
--
44
--
ns
--
76
--
ns
--
180
300
ns
--
10
-
ns
--
46
--
ns
--
82
--
ns
--
270
--
ns
--
39
--
nC
--
6
--
nC
--
16
--
nC
2
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FGPF30N30 Rev. A
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