FDW258P Datasheet, PDF (3/5 Pages) Fairchild Semiconductor – P-Channel 1.8V Specified PowerTrench MOSFET

Typical Characteristics
80
V_GS = -4.5V
-3.5V
60
-2.5V
40
-2.0V
-1.8V
20
0
0
0.5
1
1.5
2
2.5
3
-V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.3
I_D = -9A
V_GS = - 4.5V
1.2
1.1
1
0.9
0.8
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (^oC)
Figure 3. On-Resistance Variation with
Temperature.
80
V_DS = -5V
60
40
T_A = -55^oC
25^oC
125^oC
20
0
0.5
1
1.5
2
2.5
-V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
2.2
2
V_GS = - 1.8V
1.8
1.6
-2.0V
1.4
-2.5V
1.2
-3.0V
-3.5V
-4.5V
1
0.8
0
20
40
60
80
-I_D, DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.025
0.021
I_D = -4.5A
0.017
0.013
0.009
T_A = 25^oC
T_A = 125^oC
0.005
1
2
3
4
5
-V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
V_GS = 0V
1
T_A = 125^oC
0.1
0.01
25^oC
0.001
-55^oC
0.0001
0
0.2
0.4
0.6
0.8
1
-V_SD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDW258P Rev. D (W)