FDW258P Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – P-Channel 1.8V Specified PowerTrench MOSFET

January 2002
FDW258P
P-Channel 1.8V Specified PowerTrench^ MOSFET
General Description
This P-Channel 1.8V specified MOSFET is a rugged
gate version of Fairchild Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (1.8V – 8V).
Applications
• Load switch
• Motor drive
• DC/DC conversion
• Power management
Features
• –9 A, –12 V.
RDS(ON) = 11 mΩ @ VGS = –4.5 V
RDS(ON) = 14 mΩ @ VGS = –2.5 V
RDS(ON) = 20 mΩ @ VGS = –1.8 V
• Rds ratings for use with 1.8 V logic
• Low gate charge
• High performance trench technology for extremely
low RDS(ON)
• Low profile TSSOP-8 package
D
S
S
D
TSSOP-8
G
S
S
D
Pin 1
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1)
PD
Power Dissipation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
258P
FDW258P
13’’
5
6
7
8
Ratings
–12
±8
–9
–50
1.3
0.6
–55 to +150
87
114
Tape width
12mm
4
3
2
1
Units
V
V
A
W
°C
°C/W
Quantity
3000 units
2002 Fairchild Semiconductor Corporation
FDW258P Rev D (W)