FDW2502P Datasheet, PDF (3/6 Pages) Fairchild Semiconductor – Dual P-Channel 2.5V Specified PowerTrench MOSFET

Typical Characteristics
30
VGS = -4.5V
-3.5V
-4.0V
-3.0V
20
-2.5V
10
-2.0V
0
0
1
2
3
– VDS, DRAIN-SOURCE VOLTAGE (V)
2
1.8
1.6
1.4
1.2
1
0.8
0
VGS = -2.5V
-3.0V
-3.5V
-4.0V
-4.5V
5
10
15
20
25
30
-ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
1.6
ID = -4.4A
VGS = - 4.5V
1.4
1.2
1
0.8
0.6
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE ( ^oC)
Figure 3. On-Resistance Variation with
Temperature.
30
VDS = - 5V
25
20
TA = -55 ^oC
25^o C
125^o
15
10
5
0
0
1
2
3
4
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.12
0.1
0.08
0.06
0.04
0.02
0
1
ID = -4.4 A
TA = 125^oC
TA = 25^oC
2
3
4
5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
10 ^{VGS = 0V}
TA = 125^oC
1
0.1
0.01
25^o C
-55^oC
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDW2502P Rev. C1 (W)