FDW2502P Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – Dual P-Channel 2.5V Specified PowerTrench MOSFET

May 2000
PRELIMINARY
FDW2502P
Dual P-Channel 2.5V Specified PowerTrench^® MOSFET
General Description
This P-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild's Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V –12V).
Applications
• Load switch
• Motor drive
• DC/DC conversion
• Power management
Features
• –4.4 A, –20 V. R_DS(ON) = 0.035 Ω @ V_GS = –4.5 V
R_DS(ON) = 0.057 Ω @ V_GS = –2.5 V.
• Extended V_GSS range (±12V) for battery applications.
• High performance trench technology for extremely
low R_DS(ON) .
• Low profile TSSOP-8 package.
G2
S2
S2
D2
TSSOP-8
G1
S1
S1
D1
Pin 1
1
8
2
7
3
6
4
5
Absolute Maximum Ratings T_A=25^oC unless otherwise noted
Symbol
Parameter
V_DSS
V_GSS
I_D
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
P_D
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
T_J, T_STG
Operating and Storage Junction Temperature Range
Thermal Characteristics
R_{θJ A}
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
Ratings
–20
±12
–4.4
–30
1.0
0.6
-55 to +150
125
208
Units
V
V
A
W
°C
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
2502P
FDW2502P
13’’
Tape width
12mm
Quantity
3000 units
©2000 Fairchild Semiconductor Corporation
FDW2502P Rev. C1 (W)