FDW2501N_08 Datasheet, PDF (3/5 Pages) Fairchild Semiconductor – Dual N-Channel 2.5V Specified PowerTrench MOSFET

Typical Characteristics
30
V_GS = 4.5V
25
2.5V
3.5V
20
2.0V
15
10
5
1.5V
0
0
0.5
1
1.5
2
2.5
3
V_DS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.8
V_GS = 2.0V
1.6
1.4
2.5V
1.2
3.0V
3.5V
4.0V
1
4.5V
0.8
0
5
10
15
20
25
30
I_D, DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
I_D = 6.0A
V_GS = 4.5V
1.4
1.2
1
0.8
0.6
-50 -25
0
25
50
75 100 125 150
T_J, JUNCTION TEMPERATURE (^oC)
Figure 3. On-Resistance Variation with
Temperature.
0.05
I_D = 3.0A
0.04
0.03
0.02
T_A = 25^oC
T_A = 125^oC
0.01
0
2
4
6
8
10
V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
30
V_DS = 5V
25
20
15
10
T_A = 125^oC
5
-55^oC
25^oC
0
0.5
1
1.5
2
2.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
100
V_GS = 0V
10
T_A = 125^oC
1
0.1
0.01
25^oC
-55^oC
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
V_SD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDW2501N Rev E1(W)