FDW2501N_08 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – Dual N-Channel 2.5V Specified PowerTrench MOSFET

July 2008
FDW2501N
Dual N-Channel 2.5V Specified PowerTrench^® MOSFET
General Description
This N-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V – 12V).
Applications
• Load switch
• Motor drive
• DC/DC conversion
• Power management
Features
• 6 A, 20 V.
RDS(ON) = 0.018 Ω @ VGS = 4.5V
RDS(ON) = 0.028 Ω @ VGS = 2.5V
• Extended VGSS range (±12V) for battery applications.
• High performance trench technology for extremely
low RDS(ON)
• Low profile TSSOP-8 package
G2
S2
S2
D2
TSSOP-8
G1
S1
S1
D1
Pin 1
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
(Note 1a)
– Pulsed
PD
Power Dissipation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
2501N
FDW2501N
13’’
1
2
3
4
Ratings
20
±12
6
30
1.0
0.6
-55 to +150
125
208
Tape width
12mm
8
7
6
5
Units
V
V
A
W
°C
°C/W
Quantity
2500 units
©2008 Fairchild Semiconductor Corporation
FDW2501N Rev E1(W)