FDS86252 Datasheet, PDF (3/6 Pages) Fairchild Semiconductor – N-Channel Power Trench® MOSFET 150 V, 4.5 A, 55 mΩ

Typical Characteristics T_J = 25 °C unless otherwise noted
20
V_GS = 10 V
V_GS = 7 V
15
V_GS = 6 V
V_GS = 5.5 V
10
V_GS = 5 V
5
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
0
1
2
3
4
5
V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
5
V_GS = 5 V
4
V_GS = 5.5 V
3
2
V_GS = 6 V
V_GS = 7 V
1
PULSE DURATION = 80 μs
V_GS = 10 V
DUTY CYCLE = 0.5% MAX
0
0
5
10
15
20
I_D, DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
2.4
2.2
I_D = 4.5 A
V_GS = 10 V
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-75 -50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (^oC)
Figure 3. Normalized On- Resistance
vs Junction Temperature
200
I_D = 4.5 A
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
160
120
T_J = 125 ^oC
80
T_J = 25 ^oC
40
0
4
5
6
7
8
9
10
V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
20
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
15
V_DS = 5 V
T_J = 150 ^oC
10
5
T_J = 25 ^oC
T_J = -55 ^oC
0
2
3
4
5
6
7
V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
20
10 VGS = 0 V
T_J = 150 ^oC
1
0.1
0.01
T_J = 25 ^oC
T_J = -55 ^oC
0.001
0.2
0.4
0.6
0.8
1.0
1.2
V_SD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2011 Fairchild Semiconductor Corporation
3
FDS86252 Rev. C
www.fairchildsemi.com